J. Semicond. > Volume 41?>?Issue 3?> Article Number: 032102

Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

Lin Luo , Jun Liu , , Guofang Wang and Yuxing Wu

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Abstract: This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode. The extraction method for the proposed model is developed. A 2-gate switch structure is fabricated on a commercial 0.5 μm AlGaAs/GaAs pHEMT technology to verify the proposed model. Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.

Key words: GaAs pHEMTsswitchsmall-signal modelparameter extraction

Abstract: This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode. The extraction method for the proposed model is developed. A 2-gate switch structure is fabricated on a commercial 0.5 μm AlGaAs/GaAs pHEMT technology to verify the proposed model. Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.

Key words: GaAs pHEMTsswitchsmall-signal modelparameter extraction



References:

[1]

Tosaka H, Fujii T, Miyakoshi K, et al. An antenna switch MMIC using E/D mode p-HEMT for GSM/DCS/PCS/WCDMA bands application. IEEE MTT-S International Microwave Symposium Digest, 2003, 519

[2]

Chiu H C, Cheng C S, Wu C S. Enhancement-and depletion-mode InGaP/InGaAs pHEMTs on 6-inch GaAs substrate. 2005 Asia-Pacific Microwave Conference Proceedings, 2005, 4

[3]

Khusro A, Hashmi M S, Ansari A Q, et al. An accurate and simplified small signal parameter extraction method for GaN HEMT. Int J Circuit Theory Appl, 2019, 47(6), 941

[4]

Chen Y, Xu Y, Luo Y, et al. A reliable and efficient small-signal parameter extraction method for GaN HEMTs. Int J Numer Model: Electron Networks, Devices Fields, 2018, e2540

[5]

Bilevich D V, Popov A A, Salnikov A S, et al. Automatic nonlinear modeling technique for GaAs HEMT. 2018 Dynamics of Systems, Mechanisms and Machines (Dynamics), 2018, 1

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Yu L, Zheng Y K, Zhang S, et al. Small-signal model parameter extraction for AlGaN/GaN HEMT. J Semicond, 2016, 37(3), 034003

[7]

Gibiino G P, Santarelli A, Filicori F. Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements. Int J Microwave Wireless Technol, 2019, 11(5/6), 431

[8]

Changsi W, Yuehang X, Zhang W, et al. An improved temperature-dependent large signal model of microwave GaN HEMTs. J Semicond, 2016, 37(7), 074006

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Yu W H, Yang S Y, Hou Y F, et al. Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTS. J Infrared Millimeter Waves, 2018, 37(6), 683

[10]

Panda J, Jena K, Swain R, et al. Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT. J Semicond, 2016, 37(4), 044003

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Panda D K, Lenka T R. Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications. J Semicond, 2017, 38(6), 064002

[12]

Jain N, Gutmann R J. Modeling and design of GaAs MESFET control devices for broad-band applications. IEEE Trans Microwave Theory Tech, 1990, 38(2), 109

[13]

Ehoud A, Dunleavy L P, Lazar S C, et al. Extraction techniques for FET switch modeling. IEEE Trans Microwave Theory Tech, 1995, 43(8), 1863

[14]

Takatani S, Chen C D. Nonlinear steady-state III–V FET model for microwave antenna switch applications. IEEE Trans Electron Devices, 2011, 58(12), 4301

[15]

Tao Y, Hu Z F, Fan Y, et al. Direct extraction method of HEMT switch small-signal model with multiparasitic capacitive current path. Int J RF Microwave Comput-Aid Eng, 2019, 29(6), e21690

[16]

Geng M, Li P X, Luo W J, et al. Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method. Chin Phys B, 2016, 25(11), 117301

[17]

Alt A R, Marti D, Bolognesi C R. Transistor modeling: Robust small-signal equivalent circuit extraction in various HEMT technologies. IEEE Microwave Mag, 2013, 14(4), 83

[18]

White P M, Healy R M. Improved equivalent circuit for determination of mesfet and hemt parasitic capacitors from "coldfet" measurements. IEEE Microwave Guided Wave Letts, 1993, 3(12), 453

[19]

Dambrine G, Cappy A, Heliodore F, et al. A new method for determining the FET small-signal equivalent circuit. IEEE Trans Microwave Theory Tech, 1988, 36(7), 1151

[1]

Tosaka H, Fujii T, Miyakoshi K, et al. An antenna switch MMIC using E/D mode p-HEMT for GSM/DCS/PCS/WCDMA bands application. IEEE MTT-S International Microwave Symposium Digest, 2003, 519

[2]

Chiu H C, Cheng C S, Wu C S. Enhancement-and depletion-mode InGaP/InGaAs pHEMTs on 6-inch GaAs substrate. 2005 Asia-Pacific Microwave Conference Proceedings, 2005, 4

[3]

Khusro A, Hashmi M S, Ansari A Q, et al. An accurate and simplified small signal parameter extraction method for GaN HEMT. Int J Circuit Theory Appl, 2019, 47(6), 941

[4]

Chen Y, Xu Y, Luo Y, et al. A reliable and efficient small-signal parameter extraction method for GaN HEMTs. Int J Numer Model: Electron Networks, Devices Fields, 2018, e2540

[5]

Bilevich D V, Popov A A, Salnikov A S, et al. Automatic nonlinear modeling technique for GaAs HEMT. 2018 Dynamics of Systems, Mechanisms and Machines (Dynamics), 2018, 1

[6]

Yu L, Zheng Y K, Zhang S, et al. Small-signal model parameter extraction for AlGaN/GaN HEMT. J Semicond, 2016, 37(3), 034003

[7]

Gibiino G P, Santarelli A, Filicori F. Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements. Int J Microwave Wireless Technol, 2019, 11(5/6), 431

[8]

Changsi W, Yuehang X, Zhang W, et al. An improved temperature-dependent large signal model of microwave GaN HEMTs. J Semicond, 2016, 37(7), 074006

[9]

Yu W H, Yang S Y, Hou Y F, et al. Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTS. J Infrared Millimeter Waves, 2018, 37(6), 683

[10]

Panda J, Jena K, Swain R, et al. Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT. J Semicond, 2016, 37(4), 044003

[11]

Panda D K, Lenka T R. Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications. J Semicond, 2017, 38(6), 064002

[12]

Jain N, Gutmann R J. Modeling and design of GaAs MESFET control devices for broad-band applications. IEEE Trans Microwave Theory Tech, 1990, 38(2), 109

[13]

Ehoud A, Dunleavy L P, Lazar S C, et al. Extraction techniques for FET switch modeling. IEEE Trans Microwave Theory Tech, 1995, 43(8), 1863

[14]

Takatani S, Chen C D. Nonlinear steady-state III–V FET model for microwave antenna switch applications. IEEE Trans Electron Devices, 2011, 58(12), 4301

[15]

Tao Y, Hu Z F, Fan Y, et al. Direct extraction method of HEMT switch small-signal model with multiparasitic capacitive current path. Int J RF Microwave Comput-Aid Eng, 2019, 29(6), e21690

[16]

Geng M, Li P X, Luo W J, et al. Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method. Chin Phys B, 2016, 25(11), 117301

[17]

Alt A R, Marti D, Bolognesi C R. Transistor modeling: Robust small-signal equivalent circuit extraction in various HEMT technologies. IEEE Microwave Mag, 2013, 14(4), 83

[18]

White P M, Healy R M. Improved equivalent circuit for determination of mesfet and hemt parasitic capacitors from "coldfet" measurements. IEEE Microwave Guided Wave Letts, 1993, 3(12), 453

[19]

Dambrine G, Cappy A, Heliodore F, et al. A new method for determining the FET small-signal equivalent circuit. IEEE Trans Microwave Theory Tech, 1988, 36(7), 1151

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L Luo, J Liu, G F Wang, Y X Wu, Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch[J]. J. Semicond., 2020, 41(3): 032102. doi: 10.1088/1674-4926/41/3/032102.

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History

Manuscript received: 22 July 2019 Manuscript revised: 20 October 2019 Online: Accepted Manuscript: 06 February 2020 Uncorrected proof: 18 February 2020 Published: 01 March 2020

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