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A review on performance comparison of advanced MOSFET structures below 45 nm technology node

Namrata Mendiratta and Suman Lata Tripathi ,

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Abstract: CMOS technology is one of the most frequently used technologies in the semiconductor industry as it can be successfully integrated with ICs. Every two years the number of MOS transistors doubles because the size of the MOSFET is reduced. Reducing the size of the MOSFET reduces the size of the channel length which causes short channel effects and it increases the leakage current. To reduce the short channel effects new designs and technologies are implemented. Double gate MOSFET design has shown improvement in performance as amplifiers over a single MOSFET. Silicon-based MOSFET design can be used in a harsh environment. It has been used in various applications such as in detecting biomolecules. The increase in number of gates increases the current drive capability of transistors. GAA MOSFET is an example of a quadruple gate around the four sides of channel that increases gate control over the channel region. It also increases effective channel width that improves drain current and reduces leakage current keeping short channel effects under limit. Junctionless MOSFET operates faster and uses less power with increase in ON-state current leading to a good value of ION/IOFF ratio. In this paper, several gate and channel engineered MOSFET structures are analyzed and compared for sub 45 nm technology node. A comparison among different MOSFET structures has been made for subthreshold performance parameters in terms of IOFF, subthreshold slope and DIBL values. The analog/RF performance is analyzed for transconductance, effective transistor capacitances, stability factor and critical frequency. The paper also covers different applications of advance MOSFET structures in analog/digital or IoT/ biomedical applications.

Key words: MOSFETjunctionlessRFbiosensorDIBLdouble gate

Abstract: CMOS technology is one of the most frequently used technologies in the semiconductor industry as it can be successfully integrated with ICs. Every two years the number of MOS transistors doubles because the size of the MOSFET is reduced. Reducing the size of the MOSFET reduces the size of the channel length which causes short channel effects and it increases the leakage current. To reduce the short channel effects new designs and technologies are implemented. Double gate MOSFET design has shown improvement in performance as amplifiers over a single MOSFET. Silicon-based MOSFET design can be used in a harsh environment. It has been used in various applications such as in detecting biomolecules. The increase in number of gates increases the current drive capability of transistors. GAA MOSFET is an example of a quadruple gate around the four sides of channel that increases gate control over the channel region. It also increases effective channel width that improves drain current and reduces leakage current keeping short channel effects under limit. Junctionless MOSFET operates faster and uses less power with increase in ON-state current leading to a good value of ION/IOFF ratio. In this paper, several gate and channel engineered MOSFET structures are analyzed and compared for sub 45 nm technology node. A comparison among different MOSFET structures has been made for subthreshold performance parameters in terms of IOFF, subthreshold slope and DIBL values. The analog/RF performance is analyzed for transconductance, effective transistor capacitances, stability factor and critical frequency. The paper also covers different applications of advance MOSFET structures in analog/digital or IoT/ biomedical applications.

Key words: MOSFETjunctionlessRFbiosensorDIBLdouble gate



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Srivastava V M, Yadav K S, Singh G. Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch. Microelectron J, 2012, 43(9), 873

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Tienda-Luna I M, Roldan J B, Ruiz F G, et al. An analytical mobility model for square gate-all-around MOSFETs. Solid-State Electron, 2013, 90, 18

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Djeffal F, Ferhati H, Bentrcia T. Improved analog and RF performances of gate-all-around junctionless MOSFET with drain and source extensions. Superlattices Microstruct, 2016, 90, 193

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Pakaree J E, Srivastava V M. Realization with fabrication of double-gate MOSFET based differential amplifier. Microelectron J, 2019, 91, 70

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Narang R, Saxena M, Gupta M. Modeling of gate underlap junctionless double gate MOSFET as bio-sensor. Mater Sci Semicond Process, 2017, 71, 240

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Kumar A, Tripathi M M, Chaujar R. Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications. Superlattices Microstruct, 2018, 116, 171

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Narang R, Saxena M, Gupta M. Investigation of dielectric modulated (DM) double gate (DG) junctionless MOSFETs for application as a biosensors. Superlattices Microstruct, 2015, 85, 557

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Chebaki E, Djeffal F, Ferhati H, et al. Improved analog/RF performance of double gate junctionless MOSFET using both gate material engineering and drain/source extensions. Superlattices Microstruct, 2016, 92, 80

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Wang Y, Tang Y, Sun L L, et al. High performance of junctionless MOSFET with asymmetric gate. Superlattices Microstruct, 2016, 97, 2016

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Awadhiya B, Kondekar P N, Meshram A D. Understanding negative differential resistance and region of operation in undoped HfO2-based negative capacitance field effect transistor. Appl Phys A, 2019, 125, 427

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Kumar A, Gupta N, Chaujar R. TCAD RF performance investigation of transparent gate recessed channel MOSFET. Microelectron J, 2016, 49, 36

[31]

Mishra V K, Chauhan R K. Efficient layout design of junctionless transistor based 6-T SRAM cell using SOI technology. ECS J Solid State Sci Technol, 2018, 9, 456

[32]

Roy N C, Gupta A, Rai S. Analytical surface potential modeling and simulation of junction-less double gate (JLDG) MOSFET for ultra-low power analog/RF circuits. Microelectron J, 2015, 46, 916

[33]

Saramekala G K, Santra A, Dubey S, et al. An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET. Superlattices Microstruct, 2013, 60, 580

[34]

Tripathi S L, Patel R, Agrawal V K. Low leakage pocket junction-less DGTFET with bio sensing cavity region. Turk J Electr Eng Comput Sci, 2019, 27(4), 2466

[1]

Radamson H H. CMOS past, present and future. Woodhead Publishing Series in Electronic and Optical Materials, 2018

[2]

Buvaneswari B, Balamurugan N B. 2D analytical modeling and simulation of dual material DG MOSFET for biosensing application. Int J Electron Commun, 2019, 99, 193

[3]

Srivastava V M, Yadav K S, Singh G. Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch. Microelectron J, 2012, 43(9), 873

[4]

Colinge J P. Multi-gate SOI MOSFETs. Microelectron Eng, 2007, 84, 2071

[5]

Gili E, Kunz V D, Groot C H D, et al. Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance. Solid-State Electron, 2004, 48, 511

[6]

Verma J H K, Pratap Y, Haldar S, et al. Capacitance modeling of gate material engineered cylindrical/surrounded gate MOSFETs for sensor applications. Superlattices Microstruct, 2015, 88, 271

[7]

Tienda-Luna I M, Roldan J B, Ruiz F G, et al. An analytical mobility model for square gate-all-around MOSFETs. Solid-State Electron, 2013, 90, 18

[8]

Djeffal F, Ferhati H, Bentrcia T. Improved analog and RF performances of gate-all-around junctionless MOSFET with drain and source extensions. Superlattices Microstruct, 2016, 90, 193

[9]

Sarkar A, Das A K, De S, et al. Effect of gate engineering in double-gate MOSFETs for analog/RF applications. Microelectron J, 2012, 43, 873

[10]

Nasri F, Aissa M F B, Gazzah M H, et al. 3D thermal conduction in ananoscale tri-Gate MOSFET based on single-phase-lag model. Appl Therm Eng, 2015, 91(5), 647

[11]

Pakaree J E, Srivastava V M. Realization with fabrication of double-gate MOSFET based differential amplifier. Microelectron J, 2019, 91, 70

[12]

Abhinav, Rai S. Reliability analysis of junction-less double gate (JLDG) MOSFET for analog/RF circuits for high linearity applications. Microelectron J, 2017, 64, 60

[13]

Srivastava V M, Yadav K S, Singh G. Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch. Microelectron J, 2011, 42, 1124

[14]

Ku W H. Unilateral gain and stability criterion of active two-ports in terms of scattering parameters. Proc IEEE, 1966, 54(11), 1617

[15]

Sivasankaran K, Kannadassan D, Seetaram K, et al. Bias and geometry optimization of silicon nanowire transistor: radio frequency stability perspective. Micro Optic Technol Lett, 2012, 54(9), 2114

[16]

Orouji A A, Heydari S, Fathipour M. Double step buried oxide (DSBO) SOI-MOSFET: A proposed structure for improving self-heating effects. Physica E, 2009, 41, 1665

[17]

Kwona I, Kwonb H I, Cho H I. Development of high temperatureoperation silicon based MOSFET for harsh environment application. Results Phys, 2018, 11, 475

[18]

Tahirparveen. Operational transconductance amplifier and analog integrated circuits. I K International Publishing House, 2009

[19]

Narang R, Saxena M, Gupta M. Modeling of gate underlap junctionless double gate MOSFET as bio-sensor. Mater Sci Semicond Process, 2017, 71, 240

[20]

Kumar A, Tripathi M M, Chaujar R. Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications. Superlattices Microstruct, 2018, 116, 171

[21]

Djeffal F, Lakhdar N, Yousfi A. An optimized design of 10-nm-scale dual-material surrounded gate MOSFETs for digital circuit applications. Physica E, 2011, 44, 339

[22]

Pathak V, Saini G. A Graded channel dual-material gate junctionless MOSFET for analog applications. Proced Comput Sci, 2018, 125, 825

[23]

Narang R, Saxena M, Gupta M. Investigation of dielectric modulated (DM) double gate (DG) junctionless MOSFETs for application as a biosensors. Superlattices Microstruct, 2015, 85, 557

[24]

Pang Y S, Brews J R. Design of 0.1-μm pocket n-MOSFETs for low-voltage applications. Solid-State Electron, 2002, 46, 2315

[25]

Orouji A A, Kumar M J. Nanoscale SOI MOSFETs with electrically induced source/drain extension: Novel attributes and design considerations for suppressed short-channel effects. Superlattices Microstruct, 2006, 39, 395

[26]

Pal A, Sarkar A. Analytical study of dual material surrounding gate MOSFET to suppress short-channel effects (SCEs). Eng Sci Technol, 2014, 17, 205

[27]

Chebaki E, Djeffal F, Ferhati H, et al. Improved analog/RF performance of double gate junctionless MOSFET using both gate material engineering and drain/source extensions. Superlattices Microstruct, 2016, 92, 80

[28]

Wang Y, Tang Y, Sun L L, et al. High performance of junctionless MOSFET with asymmetric gate. Superlattices Microstruct, 2016, 97, 2016

[29]

Awadhiya B, Kondekar P N, Meshram A D. Understanding negative differential resistance and region of operation in undoped HfO2-based negative capacitance field effect transistor. Appl Phys A, 2019, 125, 427

[30]

Kumar A, Gupta N, Chaujar R. TCAD RF performance investigation of transparent gate recessed channel MOSFET. Microelectron J, 2016, 49, 36

[31]

Mishra V K, Chauhan R K. Efficient layout design of junctionless transistor based 6-T SRAM cell using SOI technology. ECS J Solid State Sci Technol, 2018, 9, 456

[32]

Roy N C, Gupta A, Rai S. Analytical surface potential modeling and simulation of junction-less double gate (JLDG) MOSFET for ultra-low power analog/RF circuits. Microelectron J, 2015, 46, 916

[33]

Saramekala G K, Santra A, Dubey S, et al. An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET. Superlattices Microstruct, 2013, 60, 580

[34]

Tripathi S L, Patel R, Agrawal V K. Low leakage pocket junction-less DGTFET with bio sensing cavity region. Turk J Electr Eng Comput Sci, 2019, 27(4), 2466

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History

Manuscript received: 04 November 2019 Manuscript revised: 18 November 2019 Online: Accepted Manuscript: 13 January 2020 Uncorrected proof: 05 March 2020

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